English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 870mA, 640mA |
| rds on (max) @ id, vgs: | 400mOhm @ 600mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.74nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 60.67pF @ 16V |
| 功率 - 最大值: | 530mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-563, SOT-666 |
| 供应商设备包: | SOT-563 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQJB00EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
DMP2075UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6UDFN |
|
BUK7K6R2-40EXNexperia |
MOSFET 2N-CH 40V 40A 56LFPAK |
|
ALD110900PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
DMN1002UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFETN-CHAN 12V X4-DSN3118-6 |
|
NVMFD5853NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 12A SO8FL |
|
SI7216DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 6A PPAK 1212-8 |
|
SQJQ910EL-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 100V POWERPAK8X8 |
|
FS30ASJ-06F#B00Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
APTC60HM35T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 72A SP3 |
|
CSD86356Q5DTTexas Instruments |
SYNCHRONOUS BUCK NEXFET POWER BL |
|
SI1926DL-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 60V 0.37A SC-70-6 |
|
SI1034X-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 0.18A SC89-6 |
