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RES 1.78M OHM 1W 1% AXIAL
MOSFET 2N-CH 30V 6.9A 8-SOIC
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| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.9A |
| rds on (max) @ id, vgs: | 35mOhm @ 5.9A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 530pF @ 15V |
| 功率 - 最大值: | 2.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
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