RES 5.6K OHM 5% 1/4W 1206
MOSFET 2N-CH 20V 1.33A SOT563
ISO/MINI TERMINAL/ 3.32 5
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 1.33A |
rds on (max) @ id, vgs: | 480mOhm @ 200mA, 5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.5nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 36pF @ 16V |
功率 - 最大值: | 530mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-563, SOT-666 |
供应商设备包: | SOT-563 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MCH6631-TL-E-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
IPU80R750P7AKMA1-NDRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
ADP3110KRZ-RL-ADRochester Electronics |
DUAL BOOTSTRAPPED 12 VOLT MOSFET |
|
CA5130AM96Rochester Electronics |
OPERATIONAL AMPLIFIER W/MOSFET I |
|
STL8DN6LF3STMicroelectronics |
MOSFET 2N-CH 60V 20A 5X6 |
|
MCM2301-TPMicro Commercial Components (MCC) |
P-CHANNEL,MOSFETS,DFN2020-6L PAC |
|
SP8M5FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET |
|
DMG1016UDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT363 |
|
2N7002PV,115Nexperia |
MOSFET 2N-CH 60V 0.35A SOT-666 |
|
FF2MR12KM1HOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
FDMD8680Sanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CH 80V 66A 8-PQFN |
|
SSM6N15AFE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A ES6 |
|
IPI100N12S305AKSA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |