类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
rds on (max) @ id, vgs: | 36mOhm @ 1.25A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.8nC @ 10V |
输入电容 (ciss) (max) @ vds: | 572pF @ 25V |
功率 - 最大值: | 27.8W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount, Wettable Flank |
包/箱: | PowerPAK® 1212-8W Dual |
供应商设备包: | PowerPAK® 1212-8W Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RFD20N03SM9AR4770Rochester Electronics |
20A, 30V, 0.025 OHM, N-CHANNEL |
|
NX3008PBKV,115Nexperia |
MOSFET 2P-CH 30V 220MA SOT666 |
|
ZXMN2A04DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 5.9A 8-SOIC |
|
SI4559ADY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 60V 5.3A 8-SOIC |
|
BUK9K25-40EXNexperia |
MOSFET 2N-CH 40V 18.2A 56LFPAK |
|
DMC31D5UDA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V X2-DFN0806 |
|
DMN2053UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
BUK7230-55ARochester Electronics |
PFET, 38A I(D), 55V, 0.003OHM, 1 |
|
STS1DNC45STMicroelectronics |
MOSFET 2N-CH 450V 0.4A 8SOIC |
|
DMG1016VQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
|
NVMFD5852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 15A SO8FL |
|
SSM6L36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
|
ECH8653-S-TL-HRochester Electronics |
MOSFET 2N-CH 20V 7.5A ECH8 |