English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N and 2 P-Channel (H-Bridge) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A, 1.3A |
| rds on (max) @ id, vgs: | 300mOhm @ 1.8A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.2nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 166pF @ 40V |
| 功率 - 最大值: | 1.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-223-8 |
| 供应商设备包: | SM-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIZ918DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 16A POWERPAIR |
|
FS70UMJ-06F-RENRochester Electronics |
70A, 60V, N-CHANNEL MOSFET |
|
CSD86336Q3DTexas Instruments |
25V POWERBLOCK N CH MOSFET |
|
DMN3033LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 6.9A 8-SOIC |
|
NTND31015NZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 200MA 6XLLGA |
|
MCH3307-TL-E-SYRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
SI4505DY-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 30V/8V 8-SOIC |
|
NTMFD4C85NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FDMC8010ARochester Electronics |
1-ELEMENT, N-CHANNEL |
|
CSD75301W1015Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
ZXMHC10A07N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 100V 8-SOIC |
|
SI7252DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 100V 36.7A PPAK 8SO |
|
NTJD2152PT2GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
