RES 10K OHM 1/8W 1% AXIAL
MOSFET 4N-CH 10.6V 16DIP
IC RF SWITCH SP5T 2.7GHZ ATSLP12
类型 | 描述 |
---|---|
系列: | EPAD® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 4 N-Channel, Matched Pair |
场效应管特征: | Depletion Mode |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | 12mA, 3mA |
rds on (max) @ id, vgs: | 500Ohm @ 3.6V |
vgs(th) (最大值) @ id: | 360mV @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
功率 - 最大值: | 500mW |
工作温度: | 0°C ~ 70°C (TJ) |
安装类型: | Through Hole |
包/箱: | 16-DIP (0.300", 7.62mm) |
供应商设备包: | 16-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ALD114904ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
DMG9933USD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 4.6A 8SO |
|
ALD110914SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
AON6816Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 17A DFN5X6 |
|
FDS9933BZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
EMH2408-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
BSO615CGHUMA1Rochester Electronics |
PFET, 3.1A I(D), 60V, 0.11OHM, 2 |
|
SQJQ960EL-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK8X8 |
|
MSCSM120AM31CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |
|
ITF86130SK8TRochester Electronics |
14A, 30V, 0.012OHM, N-CHANNEL , |
|
2SK2415-AZRochester Electronics |
SWITCHING N-CHANNEL POWER MOSFET |
|
UPA2450BTL-E1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SSM6N67NU,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW RON DUAL NCH MOSFETS I |