类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 5A |
rds on (max) @ id, vgs: | 36mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 10nC @ 10V |
输入电容 (ciss) (max) @ vds: | 400pF @ 10V |
功率 - 最大值: | 2W |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.173", 4.40mm Width) |
供应商设备包: | 8-PSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CSD87335Q3DTexas Instruments |
MOSFET 2N-CH 30V 8LSON |
|
IRF9910PBFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCQ4559-TPMicro Commercial Components (MCC) |
N&P-CHANNEL MOSFET, SOP-8 PACKAG |
|
DMP2004VK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.53A SOT-563 |
|
AO8808AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.9A 8TSSOP |
|
DMC2053UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
US6M1TRROHM Semiconductor |
MOSFET N/P-CH 30V/20V TUMT6 |
|
SI5922DU-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V 6A POWERPAK |
|
MSCM20XM10T3XGRoving Networks / Microchip Technology |
PM-MOSFET-OTHER-SP3X |
|
DMN5L06DWK-7-01Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V SOT363 |
|
DMN32D2LDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.4A SOT353 |
|
DMN63D8LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.22A SOT363 |
|
MSCSM70AM19CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |