类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 6 N-Channel (3-Phase Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 200V |
电流 - 连续漏极 (id) @ 25°c: | 108A (Tc) |
rds on (max) @ id, vgs: | 9.7mOhm @ 81A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 161nC @ 10V |
输入电容 (ciss) (max) @ vds: | 10.7nF @ 50V |
功率 - 最大值: | 341W (Tc) |
工作温度: | -40°C ~ 125°C (Tc) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | SP3X |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN5L06DWK-7-01Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V SOT363 |
|
DMN32D2LDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.4A SOT353 |
|
DMN63D8LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.22A SOT363 |
|
MSCSM70AM19CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |
|
NTUD3129PT5GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
PMGD175XN,115Rochester Electronics |
PMGD175XN - SMALL SIGNAL, SC-88 |
|
SI4204DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 19.8A 8-SOIC |
|
FDS8934ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF7341TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 55V 4.7A 8-SOIC |
|
FDW2510NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFD4C20NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V SO8FL |
|
SI7913DN-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A PPAK 1212-8 |
|
BUK6209-30C-NEXRochester Electronics |
PFET, 50A I(D), 30V, 0.0192OHM, |