English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | - |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A, 3.5A |
| rds on (max) @ id, vgs: | 80mOhm @ 3.1A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 665pF @ 15V |
| 功率 - 最大值: | 2W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMP2004VK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.53A SOT-563 |
|
AO8808AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.9A 8TSSOP |
|
DMC2053UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
US6M1TRROHM Semiconductor |
MOSFET N/P-CH 30V/20V TUMT6 |
|
SI5922DU-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V 6A POWERPAK |
|
MSCM20XM10T3XGRoving Networks / Microchip Technology |
PM-MOSFET-OTHER-SP3X |
|
DMN5L06DWK-7-01Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V SOT363 |
|
DMN32D2LDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.4A SOT353 |
|
DMN63D8LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.22A SOT363 |
|
MSCSM70AM19CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |
|
NTUD3129PT5GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
PMGD175XN,115Rochester Electronics |
PMGD175XN - SMALL SIGNAL, SC-88 |
|
SI4204DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 19.8A 8-SOIC |
