English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 100V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A |
| rds on (max) @ id, vgs: | 19.5mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1585pF @ 50V |
| 功率 - 最大值: | 1W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 12-PowerWDFN |
| 供应商设备包: | 12-Power3.3x5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTLJD3181PZTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BUK9K45-100E,115Nexperia |
MOSFET 2N-CH 100V 21A LFPAK56D |
|
SSM6L61NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 4A UDFN6 |
|
2N7002VC-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.28A SOT-563 |
|
IPG16N10S4L61AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 16A 8TDSON |
|
SI4963BDY-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.9A 8SOIC |
|
IPG20N06S2L65AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
|
SH8M2TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 3.5A SOP8 |
|
VT6K1T2CRROHM Semiconductor |
MOSFET 2N-CH 20V 0.1A VMT6 |
|
HP8S36TBROHM Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET, |
|
QS6K1TRROHM Semiconductor |
MOSFET 2N-CH 30V 1A TSMT6 |
|
DMP2108UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V U-WLB1510-6 |
|
FDMS7602SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/17A POWER56 |
