English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel Complementary |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 220mA (Ta), 127mA (Ta) |
| rds on (max) @ id, vgs: | 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 12.3pF @ 15V, 12.8pF @ 15V |
| 功率 - 最大值: | 125mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-XFLGA |
| 供应商设备包: | 6-XLLGA (.90x.65) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMP2101UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 9UWLB |
|
|
DMT3022UEV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
MSCSM120AM042CT6AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C |
|
|
DMN13M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN3518-6 |
|
|
ISL6605CR-TR5151Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
|
FW217-NMM-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
|
ECH8604-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
|
APTM60H23FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 20A SP1 |
|
|
2N7002KDW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-363 |
|
|
RFG45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
|
NVMFD020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
|
FW256-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
APTC80H29SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP4 |
