English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| rds on (max) @ id, vgs: | 22mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13.9nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 903pF @ 15V |
| 功率 - 最大值: | 900mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerVDFN |
| 供应商设备包: | PowerDI3333-8 (Type UXD) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSCSM120AM042CT6AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C |
|
|
DMN13M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN3518-6 |
|
|
ISL6605CR-TR5151Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
|
FW217-NMM-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
|
ECH8604-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
|
APTM60H23FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 20A SP1 |
|
|
2N7002KDW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-363 |
|
|
RFG45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
|
NVMFD020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
|
FW256-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
APTC80H29SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP4 |
|
|
FDB3652SB82059Rochester Electronics |
1-ELEMENT, N-CHANNEL |
|
|
APTM100A23STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 36A SP4 |
