类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual), Schottky |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) |
rds on (max) @ id, vgs: | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18nC, 79nC @ 10V |
输入电容 (ciss) (max) @ vds: | 790pF, 3655pF @ 15V |
功率 - 最大值: | 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerPair™ |
供应商设备包: | 8-PowerPair™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMNH6021SPDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
DMN3035LWN-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 5.5A VDFN3020-8 |
|
APTC80DDA15T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 800V 28A SP3 |
|
DMC3025LNS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V 40V POWERDI333 |
|
APTC60HM70T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
MRF8S21100HSR3,128Rochester Electronics |
RF S BAND, N-CHANNEL, MOSFET |
|
IRFR21496Rochester Electronics |
2.2A 250V 2.000 OHM N-CHANNEL |
|
APTM50DHM38GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP6 |
|
DMPH6050SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 26A POWERDI5060-8 |
|
RF1S50N06SM9AS2551Rochester Electronics |
50A, 60V, 0.022 OHM, ESD RATED, |
|
DMN16M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN2718-6 |
|
STL64DN4F7AGSTMicroelectronics |
MOSFET N-CH 40V 40A POWERFLAT |
|
APTM50HM75FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 46A SP3 |