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WALL ENCLOSURE FRONT/REAR ACCESS
N-CHANNEL POWER MOSFET
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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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DUAL N-CHANNEL 60-V (D-S) 175C M |
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MCH5802-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
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APTC60HM45T1GRoving Networks / Microchip Technology |
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0.6A, 20V, 2-ELEMENT, N CHANNEL |
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70A, 60V, 0.014OHM, N-CHANNEL |
|
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APTM50DDA10T3GRoving Networks / Microchip Technology |
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APTM20HM20STGRoving Networks / Microchip Technology |
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|
IRFP250S2453Rochester Electronics |
33A, 200V, 0.085 OHM, N-CHANNEL |
|
|
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|
|
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AUTOMOTIVE HEXFET N-CHANNEL POWE |
|
|
IRF9640S2497Rochester Electronics |
11A, 200V, 0.500 OHM, P-CHANNEL |
|
|
DMN65D8LDWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 180MA SOT363 |
|
|
HAT2050TWS-ERochester Electronics |
1A, 100V, N-CHANNEL MOSFET |