English
简体中文
CAP FILM 0.82UF 10% 305VAC RAD
MOSFET 4N-CH 200V 175A SP6
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel (H-Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 200V |
| 电流 - 连续漏极 (id) @ 25°c: | 175A |
| rds on (max) @ id, vgs: | 12mOhm @ 87.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 5mA |
| 栅极电荷 (qg) (max) @ vgs: | 224nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 13700pF @ 25V |
| 功率 - 最大值: | 694W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP6 |
| 供应商设备包: | SP6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
UPA602T-T2-ARochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
|
BUK9K13-40HXNexperia |
BUK9K13-40H - DUAL N-CHANNEL 40 |
|
|
CAB011M12FM3Wolfspeed - a Cree company |
1200V SIC H-BRIDGE MODULE |
|
|
FDPC1012SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
EFC6604R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
|
MRF6V2300NBR5,578Rochester Electronics |
LATERAL N CHANNEL SINGLE-ENDED B |
|
|
MAX620EJN/R70564Rochester Electronics |
QUAD, HIGH-SIDE MOSFET DRIVER |
|
|
APTM50AM19FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 163A SP6 |
|
|
APTM120A20SGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 50A SP6 |
|
|
ECH8674-TL-HRochester Electronics |
P-CHANNEL MOSFET |
|
|
IRF7807ZPBFPRORochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
|
NTTFD2D8N03P1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12WQFN |
|
|
FDMS001N025DSDSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 8PQFN |