English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MMPA60P1000TLA |
| 包裹: | Box |
| 零件状态: | Active |
| 场效应管类型: | 2 N Channel (Phase Leg) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 1000V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | Chassis Mount |
| 包/箱: | Y3-Li |
| 供应商设备包: | Y3-Li |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APTC60DDAM45T1GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 49A SP1 |
|
|
DMN2022UDH-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V V-DFN3030-8 |
|
|
APTC60AM45T1GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 49A SP1 |
|
|
FW216-NMM-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
|
NVMFD024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
|
DMNH6035SPDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
|
DMC2710UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 |
|
|
PMV65ENEA,215Rochester Electronics |
2.7A, 40V, N CHANNEL, SILICON, M |
|
|
FW342-T-TL-HRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
|
RFH75N05Rochester Electronics |
75A, 50V, 0.008OHM, N-CHANNEL, |
|
|
ISL6594ACRZ-TR5212Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
|
NTMFD2D4N03P8Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8PQFN |
|
|
EFC4601-M-TR-ONRochester Electronics |
N-CHANNEL MOSFET |
