类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 6 N-Channel (3-Phase Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 210A |
rds on (max) @ id, vgs: | 5.2mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 4V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | 430nC @ 10V |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | -40°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | V2-PAK |
供应商设备包: | V2-PAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK7K6R2-40E/CXNXP Semiconductors |
MOSFET 2N-CH 56LFPAK |
|
DMN3012LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 30V POWERDI3333 |
|
GWS4621LIntersil (Renesas Electronics America) |
MOSFET 2N-CH |
|
VQ1001P-2Vishay / Siliconix |
MOSFET 4N-CH 30V 0.83A 14DIP |
|
APTM50AM25FTGMicrosemi |
MOSFET 2N-CH 500V 149A SP4 |
|
APTM50DUM17GMicrosemi |
MOSFET 2N-CH 500V 180A SP6 |
|
GMM3X120-0075X2-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 75V 110A 24-SMD |
|
FDC6301N_GSanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CH 25V SUPERSOT6 |
|
19MT050XFVishay General Semiconductor – Diodes Division |
MOSFET 4N-CH 500V 31A MTP |
|
TPCP8203(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 40V 4.7A PS-8 |
|
UPA2376T1P-E1-A#YK1Renesas Electronics America |
MOSFET |
|
FDMS3615S-PC01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL POWER56 |
|
APTM50AM70FT1GMicrosemi |
MOSFET 2N-CH 500V 50A SP1 |