类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
晶体管型: | N-Channel Dual Gate |
频率: | 800MHz |
获得: | 20dB |
电压测试: | 5 V |
额定电流(安培): | 30mA |
噪声系数: | 1.7dB |
电流测试: | - |
功率输出: | - |
额定电压: | 7 V |
包/箱: | SC-82A, SOT-343 |
供应商设备包: | CMPAK-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLF8G27LS-100JAmpleon |
RF FET LDMOS 65V 17DB SOT502B |
|
PD85025S-ESTMicroelectronics |
FET RF 40V 870MHZ |
|
MMBFJ310LT1Rochester Electronics |
RF N-CHANNEL, JUNCTION FET |
|
MRF6VP3450HR6Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
BLC9H10XS-60PZAmpleon |
BLC9H10XS-60P/SOT1273/TRAYDP |
|
BLS7G2933S-150,112Rochester Electronics |
RF PFET, 1-ELEMENT, S BAND, SILI |
|
BLF6G13LS-250P,112Ampleon |
RF MOSFET LDMOS 50V LDMOST |
|
BLS8G2731LS-400PUAmpleon |
RF FET LDMOS 65V 13DB SOT539B |
|
SD57060-10STMicroelectronics |
FET RF 65V 945MHZ M243 |
|
BLS7G3135LS-200UAmpleon |
RF FET LDMOS 65V 12DB SOT502B |
|
BLF7G20LS-200,118Ampleon |
RF FET LDMOS 65V 18DB SOT502B |
|
NE3515S02-T1D-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLF6G38-10G,112Ampleon |
RF FET LDMOS 65V 14DB SOT975C |