CAP CER 2700PF 1KV X7R 1206
FET RF 65V 2.14GHZ NI780S
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
晶体管型: | LDMOS |
频率: | 2.14GHz |
获得: | 17.9dB |
电压测试: | 28 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 970 mA |
功率输出: | 34W |
额定电压: | 65 V |
包/箱: | NI-780S |
供应商设备包: | NI-780S |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLF6G10LS-135RN:11Ampleon |
RF FET LDMOS 65V 21DB SOT502B |
|
MRF5S9150HR3NXP Semiconductors |
FET RF 68V 880MHZ NI-780 |
|
BF545A,215NXP Semiconductors |
JFET N-CH 30V 6.5MA SOT23 |
|
BF909,235NXP Semiconductors |
MOSFET N-CH 7V 40MA SOT143 |
|
BLF6G10LS-160RN:11Ampleon |
RF FET LDMOS 65V 22.5DB SOT502B |
|
MRF8P26080HSR5NXP Semiconductors |
FET RF 2CH 65V 2.62GHZ NI780S-4 |
|
MRF6P24190HR5NXP Semiconductors |
FET RF 68V 2.39GHZ NI-1230 |
|
BLF6G20LS-75,112Ampleon |
RF FET LDMOS 65V 19DB SOT502B |
|
PTFA261301E V1IR (Infineon Technologies) |
IC FET RF LDMOS 130W H-30260-2 |
|
BLF6G27-10G,112Ampleon |
RF FET LDMOS 65V 19DB SOT975C |
|
BLF8G20LS-200V,115Ampleon |
RF FET LDMOS 65V 17DB SOT1120B |
|
BLF7G22L-200,112Ampleon |
RF FET LDMOS 65V 18.5DB SOT502A |
|
PD84008S-ESTMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF |