English
简体中文
TVS DIODE 40V 64.5V DO204AR
RF FET LDMOS 65V 10DB SOT467C
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 晶体管型: | LDMOS |
| 频率: | 2GHz |
| 获得: | 10dB |
| 电压测试: | 26 V |
| 额定电流（安培）: | 4.5A |
| 噪声系数: | - |
| 电流测试: | 180 mA |
| 功率输出: | 30W |
| 额定电压: | 65 V |
| 包/箱: | SOT467C |
| 供应商设备包: | SOT467C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BLC8G24LS-240AVJNXP Semiconductors |
TRANS RF 240W 65V LDMOS SOT1252 |
|
XF1001-SC-0G00Metelics (MACOM Technology Solutions) |
TRANS HFET 1W SOT89 |
|
BLF6G38-10,112Ampleon |
RF FET LDMOS 65V 14DB SOT975B |
|
BF245C_D75ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 25MA TO92 |
|
MRF6S21100HSR3NXP Semiconductors |
FET RF 68V 2.17GHZ NI-780S |
|
PD54003L-ESTMicroelectronics |
TRANSISTOR RF 5X5 POWERFLAT |
|
NE6510179A-T1-ACEL (California Eastern Laboratories) |
FET RF 8V 1.9GHZ 79A |
|
J211Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 25V 20MA TO92 |
|
PTFA181001EV4XWSA1IR (Infineon Technologies) |
IC FET RF LDMOS 100W H-36248-2 |
|
MMRF1005HR5NXP Semiconductors |
FET RF 120V 1.3GHZ NI-780 |
|
BLF6G22LS-180PN,11Ampleon |
RF FET LDMOS 65V 17DB SOT502B |
|
BLF6G22-180PN,135Ampleon |
RF FET LDMOS 65V 17DB SOT539A |
|
SD2904STMicroelectronics |
TRANS RF N-CH HF/VHF/UHF M113 |