English
简体中文
18A, 60V, 0.0057OHM, N-CHANNEL,
NTC THERMISTORS
SBC UDOO X86 ULTRA W/INTEL N3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Ta), 98A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.7mOhm @ 48A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 82 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4.1W (Ta), 115W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFS4410ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
BSS205NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 2.5A SOT23-3 |
|
TPH3207WSTransphorm |
GANFET N-CH 650V 50A TO247-3 |
|
NTHD4N02FT1Rochester Electronics |
MOSFET N-CH 20V 2.9A CHIPFET |
|
FQPF5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220F |
|
RSJ650N10TLROHM Semiconductor |
MOSFET N-CH 100V 65A LPTS |
|
IXFH230N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 230A TO247AD |
|
IRF3805S-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |
|
IPS060N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
IRL620SPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
DMG2302UK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 |
|
BUK9535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
PMPB8XNXNexperia |
MOSFET N-CH 20V 10.1A 6DFN |