English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 55A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13mOhm @ 27.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1265 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 80W (Tc) |
| 工作温度: | -60°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MTD5N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD10PF06-1STMicroelectronics |
MOSFET P-CH 60V 10A IPAK |
|
AUIRFB4410-IRRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SQD100N02-3M5L_GE3Vishay / Siliconix |
MOSFET N-CH 20V 100A TO252AA |
|
UF3C120150B7SUnitedSiC |
1200V/150MOHM, SIC, FAST CASCODE |
|
NTE2930NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 31A TO3PML |
|
BUK7225-55A,118Nexperia |
MOSFET N-CH 55V 43A DPAK |
|
IPD50P04P4L11ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 50A TO252-3 |
|
IXTP44N10TWickmann / Littelfuse |
MOSFET N-CH 100V 44A TO220AB |
|
IRFB3607PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220AB |
|
EPC2015CEPC |
GANFET N-CH 40V 53A DIE |
|
SIHB6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A D2PAK |
|
SIHA2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A TO220 |
