English
简体中文
ICR14500 800MAH 3.7V BUTTON TOP
GANFET N-CH 40V 53A DIE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 53A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 4mOhm @ 33A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 9mA |
| 栅极电荷 (qg) (max) @ vgs: | 8.7 nC @ 5 V |
| vgs (最大值): | +6V, -4V |
| 输入电容 (ciss) (max) @ vds: | 1180 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Die |
| 包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHB6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A D2PAK |
|
SIHA2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A TO220 |
|
FDS5680Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SI4401DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 16.1A 8SO |
|
IPD15N06S2L64ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 19A TO252-31 |
|
SI6466DQRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7465TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 1.9A 8SO |
|
SUD40N08-16-E3Vishay / Siliconix |
MOSFET N-CH 80V 40A TO252 |
|
STD6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A DPAK |
|
SSP1N50BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK669-ACRochester Electronics |
MOSFET N-CH 50V 100MA 3SPA |
|
SIHB22N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A D2PAK |
|
BSC882N03LSGATMA1Rochester Electronics |
MOSFET N-CH 34V TDSON-8-1 |