English
简体中文
MOSFET N-CH 600V 900MA DPAK
SMA-SJB/MCX-SJ G316 3M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 900mA (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 12Ohm @ 450mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.7 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 215 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7834PBFRochester Electronics |
MOSFET N-CH 30V 19A 8SO |
|
BSC320N20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 36A TDSON-8 |
|
NTA4151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 760MA SC75 |
|
IXTA300N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 300A TO263 |
|
APT5015SVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A D3PAK |
|
IPD60R2K1CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 2.3A TO252-3 |
|
IPD090N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 40A TO252-3 |
|
BUK6D22-30EXNexperia |
MOSFET N-CH 30V 7.2A/22A 6DFN |
|
SPP80N06S08AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
STFU28N65M2STMicroelectronics |
MOSFET N-CH 650V 20A TO220FP |
|
IPB80R290C3AATMA2Rochester Electronics |
IPB80R290 - OPTLMOS N-CHANNEL |
|
FCPF11N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
MCU30N02-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 30A DPAK |