English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 28.5mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 59 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.69 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 91W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDD02N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.2A IPAK |
|
BSZ097N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8A/40A TSDSON |
|
FCPF165N65S3L1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220F-3 |
|
DMP1022UFDEQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.1A 6UDFN |
|
NTMFS4985NFT3GRochester Electronics |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
G3R20MT12NGeneSiC Semiconductor |
SIC MOSFET N-CH 105A SOT227 |
|
IPD050N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO252-3 |
|
IPB65R190C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO263-3 |
|
PMPB12UNEXNexperia |
MOSFET N-CH 20V 11.4A 6DFN |
|
APT56F50LRoving Networks / Microchip Technology |
MOSFET N-CH 500V 56A TO264 |
|
BF20-40E6814Rochester Electronics |
RF N-CHANNEL MOSFET |
|
FQA15N70Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4969N-1GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A IPAK |
