English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 520mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1633 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | - |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSC100SM70JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 124A SOT227 |
|
IPB80N04S403ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO263-3-2 |
|
APT1201R4BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 9A TO247 |
|
2N7002-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 115MA SOT23 |
|
IPB017N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 180A TO263-7 |
|
MSC080SMA120BRoving Networks / Microchip Technology |
SICFET N-CH 1200V 37A TO247-3 |
|
NVMFS5C612NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
SI2307CDS-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 2.7A/3.5A SOT23 |
|
FDD6670ASRochester Electronics |
MOSFET N-CH 30V 76A TO252 |
|
DN2450K4-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 350MA TO252 |
|
NTD18N06LGRochester Electronics |
MOSFET N-CH 60V 18A DPAK |
|
IXTY18P10TWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO252 |
|
DMP210DUFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 200MA 3DFN |
