English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.4Ohm @ 900mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.12 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 257.3 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28.4W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD25485F5Texas Instruments |
MOSFET P-CH 20V 3.2A 3PICOSTAR |
|
IPI70N10SL16AKSA1Rochester Electronics |
MOSFET N-CH 100V 70A TO262-3 |
|
TK11P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 11.1A DPAK |
|
BUK9875-100A/C1115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK9611-80E,118Nexperia |
MOSFET N-CH 80V 75A D2PAK |
|
IXFX80N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 80A PLUS247-3 |
|
IXTA08N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263 |
|
IPD65R1K4C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO252-3 |
|
PMV37EN2RNexperia |
MOSFET N-CH 30V 4.5A TO236AB |
|
PSMN034-100PS,127Nexperia |
MOSFET N-CH 100V 32A TO220AB |
|
FCPF190N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220F |
|
STB30NF20STMicroelectronics |
MOSFET N-CH 200V 30A D2PAK |
|
IRFH7084TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |
