类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 1.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 8.1Ohm @ 800mA, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 130 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta), 20W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TP |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
XPH6R30ANB,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 45A 8SOP |
|
NTP125N02RGRochester Electronics |
MOSFET N-CH 24V 15.9A TO220AB |
|
RTQ040P02TRROHM Semiconductor |
MOSFET P-CH 20V 4A TSMT6 |
|
DI012N60D1Diotec Semiconductor |
MOSFET N-CH 600V 12A TO252-3 |
|
NVMFS6H824NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19A/103A 5DFN |
|
TSM60N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4.5A ITO220AB |
|
AOT470Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 10A/100A TO220 |
|
ATP404-H-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NTE454NTE Electronics, Inc. |
MOSFET-DUAL GATE N-CH |
|
UPA1809GR-9JG-E2-ARochester Electronics |
MOSFET N-CH 30V 8A 8TSSOP |
|
NVD5806NT4GRochester Electronics |
40V, 33A, SINGLE N-CHANNEL |
|
BUK9840-55/CUXRochester Electronics |
MOSFET N-CH 55V 5A/10.7A SOT223 |
|
STB100NF04T4STMicroelectronics |
MOSFET N-CH 40V 120A D2PAK |