English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 47A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 26mOhm @ 23.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 3.6 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.75W (Ta), 160W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK (TO-262) |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF9Z14SPBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
|
BUZ76ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SK8403190LPanasonic |
MOSFET N-CH 30V 10A 8HSSO |
|
FCPF400N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 11A TO220F |
|
RM180N100T2Rectron USA |
MOSFET N-CH 100V 180A TO220-3 |
|
IXFA90N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 90A TO263AA |
|
IPP028N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
STD46N6F7STMicroelectronics |
MOSFET N-CH 60V 15A DPAK |
|
IPD50N06S2-14Rochester Electronics |
IPD50N06 - 55V-60V N-CHANNEL AUT |
|
BSC070N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TDSON |
|
XP264N0301TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 60V 300MA SOT23 |
|
IPB65R225C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
IRF2204PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 210A TO220AB |
