English
简体中文
TRANSF .350 OHM SINGL GATE DRIVE
MOSFET N-CHANNEL 600V 24A TO247
XTAL OSC VCXO 70.0000MHZ HCMOS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 165mOhm @ 11.3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 245W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFBC20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 2.2A TO220AB |
|
IXTX210P10TWickmann / Littelfuse |
MOSFET P-CH 100V 210A PLUS247-3 |
|
IRFR120TRRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
SIDR870ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 95A PPAK SO-8DC |
|
ZVP4525ZTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 205MA SOT89-3 |
|
FDS6679Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
STD60NF55LAT4STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |
|
HUF75307D3STRochester Electronics |
MOSFET N-CH 55V 15A TO252 |
|
R6020JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
|
SI2304DS,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FDD16AN08A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 9A/50A DPAK |
|
FCD2250N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 2.6A DPAK |
|
IXFQ94N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 94A TO3P |