English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 21mOhm @ 7.3A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20.2 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 1240 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN2020MD-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHLZ34S-GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A D2PAK |
|
IPD50N06S409ATMA1Rochester Electronics |
MOSFET N-CH 60V 50A TO252-3 |
|
SQD97N06-6M3L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 97A TO252AA |
|
IXFK48N50QWickmann / Littelfuse |
MOSFET N-CH 500V 48A TO264AA |
|
TK8A60DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7.5A TO220SIS |
|
SSM3K15ACT(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3 |
|
IXTH460P2Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO247 |
|
IPI50R250CPXKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO262-3 |
|
IRFH7440TRPBFRochester Electronics |
IRFH7440 - 12V-300V N-CHANNEL PO |
|
RDD022N50TLROHM Semiconductor |
MOSFET N-CH 500V 2A CPT3 |
|
EPC2022EPC |
GANFET N-CH 100V 60A DIE |
|
NDP7050Rochester Electronics |
MOSFET N-CH 50V 75A TO220-3 |
|
TK12J60U(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 12A TO3P |
