ELEMENT KIT HG-301D 120V
MOSFET N-CH 50V 75A TO220-3
DC DC CNVRTR 0.6-5.5V 0.6-5.5V
IC MCU 4BIT 20SSOP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 50 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 13mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 115 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3.6 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 150W (Tc) |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK12J60U(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 12A TO3P |
|
SIRC10DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
IPB60R105CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO263-3-2 |
|
FQP11N50CFRochester Electronics |
MOSFET N-CH 500V 11A TO220-3 |
|
DMN2230UQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2A SOT23 |
|
NTMFS4898NFT1GRochester Electronics |
MOSFET N-CH 30V 13.2A/117A 5DFN |
|
STB35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A D2PAK |
|
BSP129H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRF9530PBFVishay / Siliconix |
MOSFET P-CH 100V 12A TO220AB |
|
PSMN0R9-25YLDXNexperia |
MOSFET N-CH 25V 300A LFPAK56 |
|
SI4166DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.5A 8SO |
|
FDG311NRochester Electronics |
MOSFET N-CH 20V 1.9A SC88 |
|
STP3NK50ZSTMicroelectronics |
MOSFET N-CH 500V 2.3A TO220AB |