FIXED IND 6.8UH 450MA 500 MOHM
IRFH7440 - 12V-300V N-CHANNEL PO
CBL ASSY 4POS MALE TO FMALE 0.5M
44A1131-12-0/2/9-9-US
类型 | 描述 |
---|---|
系列: | HEXFET®, StrongIRFET™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 138 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4.574 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 104W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PQFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RDD022N50TLROHM Semiconductor |
MOSFET N-CH 500V 2A CPT3 |
|
EPC2022EPC |
GANFET N-CH 100V 60A DIE |
|
NDP7050Rochester Electronics |
MOSFET N-CH 50V 75A TO220-3 |
|
TK12J60U(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 12A TO3P |
|
SIRC10DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
IPB60R105CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO263-3-2 |
|
FQP11N50CFRochester Electronics |
MOSFET N-CH 500V 11A TO220-3 |
|
DMN2230UQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2A SOT23 |
|
NTMFS4898NFT1GRochester Electronics |
MOSFET N-CH 30V 13.2A/117A 5DFN |
|
STB35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A D2PAK |
|
BSP129H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRF9530PBFVishay / Siliconix |
MOSFET P-CH 100V 12A TO220AB |
|
PSMN0R9-25YLDXNexperia |
MOSFET N-CH 25V 300A LFPAK56 |