MOSFET N-CH 75V 75A TO220AB
REPLACEMENT D350ST SQUARE PIN
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 12.6mOhm @ 48A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3.27 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 200W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRLR3705ZTRLRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
NTMFS4C01NT1GRochester Electronics |
MOSFET N-CH 30V 47A/303A 5DFN |
|
IRFR3708TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
RRQ020P03TCRROHM Semiconductor |
MOSFET P-CH 30V 2A TSMT6 |
|
NTBG160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 19.5A D2PAK |
|
NDT014LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.8A SOT223-4 |
|
NVMFS5A160PLZWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A/100A 5DFN |
|
FDB3672Rochester Electronics |
MOSFET N-CH 100V 7.2A/44A TO263 |
|
FQI50N06LTURochester Electronics |
MOSFET N-CH 60V 52.4A I2PAK |
|
DMP4011SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V PWRDI5060 |
|
EMH1405-TL-HRochester Electronics |
MOSFET N-CH 30V 8.5A 8EMH |
|
SIHJ240N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A PPAK SO-8 |
|
IRF7607TRPBFRochester Electronics |
IRF7607 - 12V-300V N-CHANNEL POW |