English
简体中文
TOOL DIE SET SDE PREMIUM RG-187
OPTIMOS POWER-TRANSISTOR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 23mOhm @ 3.7A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 30µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.6 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 750 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-SC-59 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
WPB4002-1ERochester Electronics |
MOSFET N-CH 600V 23A TO3P-3L |
|
BUK7Y15-100E115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ646-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
SSM3K361R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET NCH 100V 3.5A SOT23F |
|
NTMFS4965NFT1GRochester Electronics |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
IRFP150NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO247AC |
|
SQJA46EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
PSMN013-100ES,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
TK100S04N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A DPAK |
|
SPU02N60S5BKMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
BUK7510-100B,127Rochester Electronics |
PFET, 75A I(D), 100V, 0.01OHM, 1 |
|
IRLR3110ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
RJK1054DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |