English
简体中文
MOSFET N-CH 600V 30A D2PAK
AMPLIFIER - MEDIUM POWER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1851 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT6007LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 15A PWRDI3333 |
|
SIHFS11N50A-GE3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO263 |
|
STQ1HNK60R-APSTMicroelectronics |
MOSFET N-CH 600V 400MA TO92-3 |
|
TK60P03M1,RQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A DPAK |
|
TSM4NB60CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A TO251 |
|
SPP02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO7407Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.2A SC70-3 |
|
APT8056BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 16A TO247 |
|
FQD4P25TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 3.1A DPAK |
|
ZXMP10A17KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A TO252-2 |
|
STP4N52K3STMicroelectronics |
MOSFET N-CH 525V 2.5A TO220 |
|
SQ2303ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
|
DMP2033UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A TSOT-26 |