类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDD5810-F085Rochester Electronics |
MOSFET N-CH 60V 7.4A/37A DPAK |
|
PSMN6R5-25YLC,115Nexperia |
MOSFET N-CH 25V 64A LFPAK56 |
|
TPH11006NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 17A 8SOP |
|
SIRA54DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
2N7002WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SC70 |
|
TK10A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220SIS |
|
IPU60R1K5CEBKMA1Rochester Electronics |
MOSFET N-CH 600V 3.1A TO251 |
|
TK5P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A DPAK |
|
IRFBF20SPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
SIHG17N60D-E3Vishay / Siliconix |
MOSFET N-CH 600V 17A TO247AC |
|
2SK4098FSRochester Electronics |
MOSFET N-CH 600V 6A TO220F-3FS |
|
IXFN210N20PWickmann / Littelfuse |
MOSFET N-CH 200V 188A SOT-227B |
|
STF16N50M2STMicroelectronics |
MOSFET N-CH 500V 13A TO220 |