English
简体中文
MOSFET N-CH 60V 7.4A/37A DPAK
RBR30T60ANZ IS SCHOTTKY BARRIER
PULSE XFMR 1:1 TX 1:1 RX 22MH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, PowerTrench® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.4A (Ta), 37A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 32A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.89 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 72W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN6R5-25YLC,115Nexperia |
MOSFET N-CH 25V 64A LFPAK56 |
|
TPH11006NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 17A 8SOP |
|
SIRA54DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
2N7002WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SC70 |
|
TK10A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220SIS |
|
IPU60R1K5CEBKMA1Rochester Electronics |
MOSFET N-CH 600V 3.1A TO251 |
|
TK5P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A DPAK |
|
IRFBF20SPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
SIHG17N60D-E3Vishay / Siliconix |
MOSFET N-CH 600V 17A TO247AC |
|
2SK4098FSRochester Electronics |
MOSFET N-CH 600V 6A TO220F-3FS |
|
IXFN210N20PWickmann / Littelfuse |
MOSFET N-CH 200V 188A SOT-227B |
|
STF16N50M2STMicroelectronics |
MOSFET N-CH 500V 13A TO220 |
|
CSD17313Q2Texas Instruments |
MOSFET N-CH 30V 5A 6WSON |