English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.3mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 290 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7960 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
|
RCD075N19TLROHM Semiconductor |
MOSFET N-CH 190V 7.5A CPT3 |
|
TSM9N90ECI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 9A ITO220AB |
|
MCH3375-TL-HRochester Electronics |
MOSFET P-CH 30V 1.6A SC70 |
|
BSH205G2235Rochester Electronics |
P-CHANNEL MOSFET |
|
BUK9628-100A,118Nexperia |
MOSFET N-CH 100V 49A D2PAK |
|
NTD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPB120N06S402ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
RW1C020UNT2RROHM Semiconductor |
MOSFET N-CH 20V 2A 6WEMT |
|
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
FQP19N20LRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
TSM70N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A ITO220AB |
