MOSFET N-CH 400V 16A TO247-3
BACKPLANE 6U 12CHAN VME J1/J2/J0
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 400 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 300mOhm @ 9.6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 76 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MCH6444-TL-WRochester Electronics |
MOSFET N-CH 35V 2.5A MCPH6 |
|
IRFB33N15DPBFRochester Electronics |
MOSFET N-CH 150V 33A TO220AB |
|
NTMFS4C06NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/69A 5DFN |
|
PMXB350UPEZNexperia |
MOSFET P-CH 20V 1.2A DFN1010D-3 |
|
STD100NH02LT4STMicroelectronics |
MOSFET N-CH 24V 60A DPAK |
|
NTD4804N-35GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
STP80N10F7STMicroelectronics |
MOSFET N-CH 100V 80A TO220 |
|
HUFA76413D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
UPA2751GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NIF9N05CLT3G-SYRochester Electronics |
2.6 A, 52 V, N-CHANNEL, LOGIC LE |
|
EPC2020EPC |
GANFET N-CH 60V 90A DIE |
|
IPZ60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 22A TO247-4 |
|
STW69N65M5-4STMicroelectronics |
MOSFET N-CH 650V 58A TO247-4L |