类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF3709SPBFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
SIR494DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 60A PPAK SO-8 |
|
BUK7M42-60EXNexperia |
MOSFET N-CH 60V 20A LFPAK33 |
|
IPA65R310CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220 |
|
MMDF2N05ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIE818DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 60A 10POLARPAK |
|
HAT2279N-EL-ERochester Electronics |
MOSFET N-CH 80V 30A 8LFPAK |
|
BSC009NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 40A/100A TDSON |
|
FQPF11N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |
|
FDG316PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
MTB60N05HDLT4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUFA75344P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA10N60PWickmann / Littelfuse |
MOSFET N-CH 600V 10A TO263 |