类型 | 描述 |
---|---|
系列: | CoolMOS™ CFD2 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 11.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 310mOhm @ 4.4A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 400µA |
栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1100 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 32W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMDF2N05ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIE818DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 60A 10POLARPAK |
|
HAT2279N-EL-ERochester Electronics |
MOSFET N-CH 80V 30A 8LFPAK |
|
BSC009NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 40A/100A TDSON |
|
FQPF11N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |
|
FDG316PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
MTB60N05HDLT4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUFA75344P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA10N60PWickmann / Littelfuse |
MOSFET N-CH 600V 10A TO263 |
|
PSMN026-80YS,115Nexperia |
MOSFET N-CH 80V 34A LFPAK56 |
|
IPD70P04P409ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 73A TO252-3 |
|
IPB70N10SL16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
|
BUK624R5-30C,118Rochester Electronics |
PFET, 90A I(D), 30V, 0.0075OHM, |