RES 88.7 OHM 1% 1/20W 0201
CAP CER 3900PF 250V C0G/NP0 RAD
N-CHANNEL POWER MOSFET
ULTRASONIC SENSOR HRXL-MAXSONAR
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RFD16N05LSM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 16A TO252AA |
|
SPI20N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 20.7A TO262-3 |
|
RM3010S6Rectron USA |
MOSFET N-CHANNEL 30V 10A SOT23-6 |
|
SI7230DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
|
TN5335K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 110MA SOT23 |
|
FQAF13N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8A TO3PF |
|
IPSA70R950CEAKMA1Rochester Electronics |
MOSFET N-CH 700V 8.7A TO251-3 |
|
SI7852DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
|
FDMC8010Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/75A POWER33 |
|
BSR92PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 140MA SC59 |
|
SIA810DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 4.5A PPAK SC70-6 |
|
BSS123WQ-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT323 |
|
IXTA16N50P-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |