English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 73mOhm @ 8A, 0V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 208 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5500 pF @ 25 V |
| 场效应管特征: | Depletion Mode |
| 功耗（最大值）: | 695W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFI830GPBFVishay / Siliconix |
MOSFET N-CH 500V 3.1A TO220-3 |
|
DMG4712SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11.2A 8SOP |
|
TK160F10N1L,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 160A TO220SM |
|
IPP65R115CFD7AAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO220-3 |
|
BSS126H6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
FDMC7664Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.8A/24A 8MLP |
|
FDMS8020Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 26A/42A 8PQFN |
|
BUK9615-100E,118Rochester Electronics |
MOSFET N-CH 100V 66A D2PAK |
|
SQD25N15-52_GE3Vishay / Siliconix |
MOSFET N-CH 150V 25A TO252 |
|
IPD80R1K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO252 |
|
RYC002N05T316ROHM Semiconductor |
MOSFET N-CHANNEL 50V 200MA SST3 |
|
STF22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A TO220FP |
|
BSZ160N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8A/40A 8TSDSON |
