English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 46A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 84 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3.07 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSS123Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 170MA SOT23-3 |
|
NTTFS4928NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.3A/37A 8WDFN |
|
IPAN60R180P7SXKSA1IR (Infineon Technologies) |
MOSFET 600V TO220 FULL PACK |
|
AOB280LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 20.5A/140A TO263 |
|
NTD4970N-1GRochester Electronics |
MOSFET N-CH 30V 8.5A/36A IPAK |
|
BSC066N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 64A TDSON-8-6 |
|
IXFK64N50Q3Wickmann / Littelfuse |
MOSFET N-CH 500V 64A TO264AA |
|
ISL9N312AD3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
YJL3134KW-F2-0000HF |
N-CH MOSFET 20V 0.75A SOT-323 |
|
IRF710BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 65A TO220-3 |
|
IRFPC40PBFVishay / Siliconix |
MOSFET N-CH 600V 6.8A TO247-3 |
|
BSC0906NSRochester Electronics |
BSC0906 - 12V-300V N-CHANNEL POW |
