类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6.3mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPT60R055CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 44A 8HSOF |
|
ZXMP3F30FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.8A SOT23 |
|
AOL1240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 19A/69A ULTRASO8 |
|
BUK7M22-80EXNexperia |
MOSFET N-CH 80V 37A LFPAK33 |
|
IRLB3034PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
|
FQI17N08LTURochester Electronics |
MOSFET N-CH 80V 16.5A I2PAK |
|
FQPF13N50TRochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
IPB090N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A D2PAK |
|
IRLR2905PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQD3N50CTMRochester Electronics |
MOSFET N-CH 500V 2.5A DPAK |
|
IRF241Rochester Electronics |
MOSFET N-CH 150V 18A TO204AE |
|
SFU9214TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
TN2124K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 134MA TO236AB |