English
简体中文
MOSFET N-CH 100V 130A TO220AB
IC REG LINEAR 1.8V 150MA SOT23-5
SENSOR 100PSI 1/8-27NPT .5-4.5V
SAFETY LIGHT CURTAIN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 130A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9.1mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 104 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 5080 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQP11N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220-3 |
|
STP11NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 10A TO220FP |
|
IPB110N20N3LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A TO263-3 |
|
STW21NM60NDSTMicroelectronics |
MOSFET N-CH 600V 17A TO247-3 |
|
IRF7451TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 3.6A 8SO |
|
SQJA04EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 75A PPAK SO-8 |
|
BUK7Y7R8-80EXNexperia |
MOSFET N-CH 80V 100A LFPAK56 |
|
STF9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
FQPF13N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 13A TO220F |
|
BUK653R5-55C,127Rochester Electronics |
PFET, 120A I(D), 55V, 0.0055OHM, |
|
DMP4065S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 2.4A SOT23 |
|
FCPF1300N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 4A TO220F |
|
PMPB15XP,115Nexperia |
MOSFET P-CH 12V 8.2A DFN2020MD-6 |