MOSFET N-CH 80V 49A TDSON
FET RF 65V 880MHZ NI-780S
类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 49A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 11.7mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 22µA |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1300 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 50W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-7 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRL40S212IR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
IPD70P04P4L08ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 70A TO252-3 |
|
SIHFL9014TR-GE3Vishay / Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
|
LND150N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
IRFW710BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB081N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A D2PAK |
|
FDMS86581-F085Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRFB4510PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 62A TO220AB |
|
BUK754R7-60E,127Rochester Electronics |
MOSFET N-CH 60V 100A TO220AB |
|
NTD4813N-35GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A IPAK |
|
CSD18513Q5ATexas Instruments |
MOSFET N-CH 40V 124A 8VSON |
|
FQU5N50CTU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A IPAK |
|
FDMC7672Rochester Electronics |
MOSFET N-CH 30V 16.9A/20A 8MLP |