类型 | 描述 |
---|---|
系列: | DeepGATE™, STripFET™ VII |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 35mOhm @ 12.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 920 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 40W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPP60R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO220-3 |
|
AOU4S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO251-3 |
|
IAUC28N08S5L230ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 28A 8TDSON-33 |
|
SIR466DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
RF4E110BNTRROHM Semiconductor |
MOSFET N-CH 30V 11A HUML2020L8 |
|
FQD1N60TMRochester Electronics |
MOSFET N-CH 600V 1A DPAK |
|
STP46NF30STMicroelectronics |
MOSFET N CH 300V 42A TO-220 |
|
TPH3208PSTransphorm |
GANFET N-CH 650V 20A TO220AB |
|
PMCM4401UPE084Rochester Electronics |
P-CHANNEL MOSFET |
|
SIJ438DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 80A PPAK SO-8 |
|
EPC2034EPC |
GANFET N-CH 200V 48A DIE |
|
BSP135H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IRF430Rochester Electronics |
500V, N-CHANNEL REPETITIVE AVALA |