类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VP0550N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 500V 54MA TO92-3 |
|
DMP2040UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 13A 6UDFN |
|
IPW65R150CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SI2312BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3 |
|
IRFR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
CSD22206WTexas Instruments |
MOSFET P-CH 8V 5A 9DSBGA |
|
BSC889N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOI7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO251A |
|
NTTFS4840NTAGRochester Electronics |
MOSFET N-CH 30V 4.6A/26A 8WDFN |
|
SFW9Z34TMRochester Electronics |
MOSFET P-CH 60V 18A D2PAK |
|
APT47M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A ISOTOP |
|
SIHB12N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A D2PAK |
|
NVMFS5C468NT1GRochester Electronics |
MOSFET N-CH 40V 12A/35A 5DFN |